Kraev Stanislav Alekseevich

Publications in Math-Net.Ru

1. Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  837–840
2. Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition
   
   Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  49–58
3. Features of the vapor-phase epitaxy of GaAs on nonplanar substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  958–961
4. Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  865–867
5. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
6. The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  34–38
7. Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1923–1932
8. Ohmic contacts to CVD diamond with boron-doped $\delta$ layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1386–1390
9. Vertical field-effect transistor with control $p$–$n$-junction based on GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1311–1314
10. Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1229–1232
11. A new approach to tof-sims analysis of the phase composition of carbon-containing materials
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  50–54
12. Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1362–1365
13. Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1503–1506
14. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1459–1462