Brunkov Pavel Nikolaevich

Publications in Math-Net.Ru

1. Czochralski growth of semi-insulating bulk iron-doped $\beta$-Ga$_2$O$_3$ crystals with a resistivity of 160 G$\Omega$ $\cdot$ cm
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  57–60
2. Simulating 2D-diffraction patterns of model gallium arsenide whisker crystals
   
   Fizika Tverdogo Tela, 65:1 (2023),  98–105
3. Frequency dependence measuring of skin-effect on metal wires with circular cross-section
   
   Zhurnal Tekhnicheskoi Fiziki, 93:8 (2023),  1188–1192
4. Influence of the sign of the zeta potential of nanodiamond particles on the morphology of graphene-detonation nanodiamond composites in the form of suspensions and aerogels
   
   Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1853–1868
5. Molecular dynamics study of dimer formation on GaAs (001) surface at low temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  134–137
6. Laser formation of colloidal sulfur- and carbon-doped silicon nanoparticles
   
   Optics and Spectroscopy, 128:7 (2020),  897–901
7. A study of the photoresponse in graphene produced by chemical vapor deposition
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  833–840
8. The influence of reactor pressure on the properties of GaN layers grown by MOVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
9. Smoothing the surface of gallium antimonide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  48–50
10. Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1519
11. Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1424–1426
12. Моделирование с помощью молекулярной динамики низкотемпературной реконструкции поверхности (001) GaAs в процессе наноиндентирования
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1164
13. Insulating GaN epilayers co-doped with iron and carbon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
14. Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1663–1667
15. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
16. Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  477
17. Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  127–132
18. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
19. Elastic and piezoelectric parameters of the crystals of histidine phosphite $L$-Hist $\cdot$ H$_{3}$РО$_{3}$ measured by the method of electromechanical resonance
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  69–78
20. Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  67–74
21. Experimental study of cyclic action of plasma on tungsten
    
    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  51–57
22. Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  997–1000
23. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
24. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
25. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
26. Formation of silver fractal structures in ion-exchange glasses under poling
    
    Zhurnal Tekhnicheskoi Fiziki, 85:2 (2015),  112–117
27. Determination of the technological growth parameters in the InAs–GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1136–1143
28. Effect of the interaction conditions of the probe of an atomic-force microscope with the $n$-GaAs surface on the triboelectrization phenomenon
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1083–1087
29. Temperature dependences of the contact resistivity in ohmic contacts to $n^+$-InN
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  472–482
30. Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  254–260
31. Cylindrical multilayer metal–dielectric structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:22 (2015),  61–65
32. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1640–1645
33. $P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)
    
    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1394–1397
34. Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1186–1191
35. Optimization of carrier mobility in luminescence layers based on europium $\beta$
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  384–387
36. Study of the electrical properties of individual (Ga,Mn)As nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  358–363
37. Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  55–60
38. Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  36–43
39. Single-layer graphene oxide films on a silicon surface
    
    Zhurnal Tekhnicheskoi Fiziki, 83:11 (2013),  67–71
40. Characterization of defects in colloidal CdSe nanocrystals by the modified thermostimulated luminescence technique
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1339–1343
41. Local triboelectrification of an $n$-GaAs surface using the tip of an atomic-force microscope
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1181–1184
42. Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  962–969
43. Statistical analysis of AFM topographic images of self-assembled quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  921–926
44. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  414–419


45. Андрей Георгиевич Забродский, к 75-летию со дня рождения
    
    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894