Brunkov Pavel Nikolaevich

Publications in Math-Net.Ru

1. Molecular dynamics study of dimer formation on GaAs (001) surface at low temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  134–137
2. Laser formation of colloidal sulfur- and carbon-doped silicon nanoparticles
   
   Optics and Spectroscopy, 128:7 (2020),  897–901
3. A study of the photoresponse in graphene produced by chemical vapor deposition
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  833–840
4. The influence of reactor pressure on the properties of GaN layers grown by MOVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
5. Smoothing the surface of gallium antimonide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  48–50
6. Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1519
7. Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1424–1426
8. Моделирование с помощью молекулярной динамики низкотемпературной реконструкции поверхности (001) GaAs в процессе наноиндентирования
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1164
9. Insulating GaN epilayers co-doped with iron and carbon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
10. Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1663–1667
11. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
12. Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  477
13. Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  127–132
14. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
15. Elastic and piezoelectric parameters of the crystals of histidine phosphite $L$-Hist $\cdot$ H$_{3}$РО$_{3}$ measured by the method of electromechanical resonance
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  69–78
16. Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  67–74
17. Experimental study of cyclic action of plasma on tungsten
    
    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  51–57
18. Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  997–1000
19. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
20. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
21. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93


22. Андрей Георгиевич Забродский, к 75-летию со дня рождения
    
    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894