Lebedeva Natal'ya Mikailovna

Publications in Math-Net.Ru

1. High-voltage 4$H$-SiC based avalanche diodes with a negative beve
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  349–353
2. TCAD simulation of high-voltage 4$H$-SiC diodes with an edge semi-insulating region
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  201–206
3. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
4. High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  48–50
5. Avalanche breakdown in 4$H$-SiC Schottky diodes: reliability aspects
   
   Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2133–2138
6. Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask
   
   Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020),  997–1000
7. Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  207–211
8. Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102