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Publications in Math-Net.Ru
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High-voltage 4$H$-SiC based avalanche diodes with a negative beve
Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 349–353
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High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination
Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 188–194
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High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 48–50
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Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask
Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020), 997–1000
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Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode
Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 97–102
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Correction of the reverse recovery characteristics of high-voltage 4$H$-SiC junction diodes using proton irradiation
Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 862–864
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Simulation of transient processes in 4$H$-SiC based semiconductor devices (taking into account the incomplete ionization of dopants in the atlas module of the SILVACO TCAD software package)
Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 407–410
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Avalanche breakdown stability of high voltage (1430 V) 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1527–1531
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Effect of low-dose proton irradiation on the electrical characteristics of 4$H$-SiC junction diodes
Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1187–1190
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The influence of heat treatment on the electrical characteristics of semi-insulating sic layers obtained by irradiating $n$-SiC with high-energy argon ions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 11–16
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4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 3–8
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Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes in the avalanche breakdown mode
Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 390–394
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Semi-insulating 4$H$-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into $n$-type epitaxial films
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 937–940
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Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC
Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 900–904
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