Nadtochiy Aleksei Mikailovich

Publications in Math-Net.Ru

1. Ultrahigh modal gain in stripe injection lasers and microlasers based on InGaAs/GaAs quantum dots
   
   Kvantovaya Elektronika, 52:7 (2022),  593–596
2. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers
   
   Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
3. Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements
   
   Optics and Spectroscopy, 129:2 (2021),  218–222
4. Increase in the efficiency of a tandem of semiconductor laser – optical amplifier based on self-organizing quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1223–1228
5. Saturation power of a semiconductor optical amplifier based on self-organized quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  820–825
6. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
7. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
8. Impact of substrate in calculating the electrical resistance of microdisk lasers
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  195–200
9. Increasing the optical power of InGaAs/GaAs microdisk lasers transferred to a silicon substrate by thermal compression
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  3–6
10. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
11. Spectroscopy of photoluminescence excitation of InAs/InGaAs/GaAs quantum dot array in 20–300 K temperature range
    
    Optics and Spectroscopy, 128:1 (2020),  110–117
12. Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1079–1087
13. Ultimate lasing temperature of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
14. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
15. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
16. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
17. The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020),  30–33
18. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
19. Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  3–6
20. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
21. Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1520–1526
22. Lasers based on quantum well-dots emitting in the 980- and 1080-nm optical ranges
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  42–45
23. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
24. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
25. In$_{0.8}$Ga$_{0.2}$As quantum dots for GaAs solar cells: metal-organic vapor-phase epitaxy growth peculiarities and properties
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  729–735
26. Bimodality in arrays of In$_{0.4}$Ga$_{0.6}$As hybrid quantum-confined heterostructures grown on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  57–62
27. InAs QDs in a metamorphic In$_{0.25}$Ga$_{0.75}$As matrix, grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  704–710
28. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  372–377
29. Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1208–1212
30. Optical properties of hybrid quantum-confined structures with high absorbance
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1202–1207