Pechnikov Aleksei Igorevich

Publications in Math-Net.Ru

1. Modification of near-surface layers of alpha-gallium oxide under irradiation with ultra-high ion doses
   
   Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  513–523
2. Deep ultraviolet photodetectors based on the In$_2$O$_3$–Ga$_2$O$_3$ mixed compounds films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  7–9
3. Structure and recombination properties of twin boundaries in $\kappa$-phase of gallium oxide
   
   Fizika Tverdogo Tela, 65:12 (2023),  2194–2197
4. Structural transformation of $\alpha$- and $\kappa$-Ga$_2$O$_3$ thin films on sapphire upon annealing in air
   
   Fizika Tverdogo Tela, 65:10 (2023),  1715–1721
5. Detection and study of 60$^\circ$-rotation domains in $\alpha$-Ga$_2$O$_3$ using transmission electron microscopy
   
   Fizika Tverdogo Tela, 65:1 (2023),  43–48
6. Record thick $\kappa(\varepsilon)$-Ga$_2$O$_3$ epitaxial layers grown on GaN/$c$-sapphire
   
   Zhurnal Tekhnicheskoi Fiziki, 93:3 (2023),  403–408
7. High sensitivity of halide vapor phase epitaxy grown indium oxide films to ammonia
   
   Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  145–152
8. Defect structure of $\alpha$-Ga$_2$O$_3$ film grown on a $m$-face sapphire substrate, according to transmission electron microscopy investigation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  26–29
9. Radiation damage accumulation in $\alpha$-Ga$_2$O$_3$ under P and PF$_4$ ion bombardment
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  882–887
10. Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:22 (2022),  24–27
11. Growth of thick $\varepsilon(\kappa)$-Ga$_2$O$_3$ films by halide vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022),  35–38
12. Gas-sensing properties of In$_2$O$_3$–Ga$_2$O$_3$ alloy films
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:14 (2022),  37–41
13. Tribological studies of $\alpha$-$\beta$-Ga$_{2}$O$_{3}$ layers paired with a sapphire counterface
    
    Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021),  1354–1362
14. Effect of ambient humidity on the electrical conductive properties of polymorphic Ga$_{2}$O$_{3}$ structures
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  269–276
15. Mechanical properties of epilayers of metastable $\alpha$- and $\varepsilon$-Ga$_{2}$O$_{3}$ phases studied by nanoindentation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  3–7
16. Elasticity and inelasticity of bulk GaN crystals
    
    Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020),  138–142
17. Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  27–29
18. Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  789–792
19. Microhardness and crack resistance of gallium oxide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  51–54
20. Epitaxial gallium oxide on a SiC/Si substrate
    
    Fizika Tverdogo Tela, 58:9 (2016),  1812–1817
21. Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  997–1000
22. Large-area crystalline GaN slabs
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  84–90