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Publications in Math-Net.Ru
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Spectral and electrical properties of led heterostructures with InAs-based active layer
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 682–687
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Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range
Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 502–506
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Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP
Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 277–281
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Experimental study and simulation of the spectral characteristics of LED heterostructures with an inas active region
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 51–54
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Carrier lifetime in semiconductors with band-gap widths close to the spin-orbit splitting energies
Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 450–455
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Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252
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