Mynbaev Karim Jafarovich

Publications in Math-Net.Ru

1. Optical and structural properties of Hg$_{0.7}$Cd$_{0.3}$Te epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1040–1044
2. Spectral and electrical properties of led heterostructures with InAs-based active layer
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  682–687
3. Optical properties of quasi-bulk gallium-nitride crystals with highly oriented texture structure
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  554–558
4. Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range
   
   Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  502–506
5. Suppression of wavelength temperature dependence in heterostructures with staggered type II heterojunction InAsSb/InAsSbP
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  277–281
6. Optical and structural properties of HgCdTe solid solutions with a high CdTe content
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1302–1308
7. Experimental study and simulation of the spectral characteristics of LED heterostructures with an inas active region
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020),  51–54
8. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
9. Parameters of lateral and unsteady cord currents in a cylindrical chalcogenide glassy semiconductor
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1669–1673
10. Carrier lifetime in semiconductors with band-gap widths close to the spin-orbit splitting energies
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  450–455
11. An optical study of disordering in cadmium mercury telluride solid solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  24–27
12. Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions
    
    Zhurnal Tekhnicheskoi Fiziki, 87:3 (2017),  419–426
13. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  247–252
14. Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  208–211
15. Formation of graphite/SiC structures by the thermal decomposition of silicon carbide
    
    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  138–142