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Publications in Math-Net.Ru
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Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)
Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 995–1010
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Magnetophonon oscillations of magnetoresistance in broken-gap InAs/GaS quantum well
Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 313–318
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Radiative recombination and impact ionization in semiconductor nanostructures (review)
Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1267–1288
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Discovery of III–V semiconductors: physical properties and application
Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 291–308
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Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE
Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 50–54
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Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 906–911
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Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field
Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1393–1399
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Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1196–1201
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Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 247–252
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Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers
Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 794–800
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Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 476
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