Konenkova Elena Valer'evna

Publications in Math-Net.Ru

1. Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  908–911
2. Formation of semipolar III-nitride layers on patterned Si(100) substrates with a self-forming nanomask
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  356–359
3. Plastic relaxation of stressed semipolar AlN(10$\bar1$1) layer synthesized on a nanopatterned Si(100) substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2123–2126
4. Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  29–31
5. Hydride vapor-phase epitaxy of a semipolar AlN(10$\bar{1}$2) layer on a nanostructured Si(100) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  12–14
6. Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019),  574–577
7. Properties of semipolar GaN grown on a Si(100) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1006–1009
8. Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  3–5
9. Semipolar gan layers grown on nanostructured Si(100) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  45–51
10. Hexagonal AlN layers grown on sulfided Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  96–103
11. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates
    
    Fizika Tverdogo Tela, 59:4 (2017),  660–667