Rodin Sergei Nikolaevich

Publications in Math-Net.Ru

1. Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 115:10 (2022),  611–612
2. Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  908–911
3. Formation of semipolar III-nitride layers on patterned Si(100) substrates with a self-forming nanomask
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  356–359
4. Calculation of the Ga+ FIB ion dose distribution by SEM image
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1390
5. Strong coupling of excitons in hexagonal GaN microcavities
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  85–88
6. Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  29–31
7. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography
   
   Fizika Tverdogo Tela, 61:12 (2019),  2333
8. Properties of semipolar GaN grown on a Si(100) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1006–1009
9. Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  3–5
10. Selective epitaxial growth of III–N structures using ion-beam nanolithography
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
11. Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  816–818
12. Semipolar gan layers grown on nanostructured Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  45–51
13. InGaN/GaN light-emitting diode microwires of submillimeter length
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104