Rodin Sergei Nikolaevich

Publications in Math-Net.Ru

1. The investigation of the impact of nano-structured AlN/Si(100) templates for the growth of semipolar AlN$(10\bar11)$ layers
   
   Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  3–7
2. Metalorganic vapor phase epitaxy of AlN layers on a nanostructured AlN/Si(100) template synthesized by reactive magnetron sputtering
   
   Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  944–947
3. Surface morphology of AlN layers grown on a nano-structured SiN$_x$/Si(100) template
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  3–6
4. On a successful experience of homoepitaxy of $\beta$-Ga$_2$O$_3$ layers on native substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  43–46
5. Initial stages of growth of the $\mathrm{GaN}(11\bar22)$
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  3–6
6. Enhancement of the basal-plane stacking fault emission in GaN planar nanowire microcavity
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 115:10 (2022),  611–612
7. Morphology of the surface of semipolar GaN layers during epitaxy on a nano-patterned Si substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  720–723
8. Study of Ga$_2$O$_3$ deposition by MOVPE from trimethylgallium and oxygen in a wide temperature range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  44–47
9. Initial stages of growth of semipolar AlN on a nanopatterned Si(100) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  908–911
10. Formation of semipolar III-nitride layers on patterned Si(100) substrates with a self-forming nanomask
    
    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  356–359
11. Calculation of the Ga+ FIB ion dose distribution by SEM image
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1390
12. Strong coupling of excitons in hexagonal GaN microcavities
    
    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  85–88
13. Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  29–31
14. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography
    
    Fizika Tverdogo Tela, 61:12 (2019),  2333
15. Properties of semipolar GaN grown on a Si(100) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1006–1009
16. Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  3–5
17. Selective epitaxial growth of III–N structures using ion-beam nanolithography
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
18. Concentric hexagonal GaN structures for nanophotonics, fabricated by selective vapor-phase epitaxy with ion-beam etching
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  816–818
19. Semipolar gan layers grown on nanostructured Si(100) substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  45–51
20. InGaN/GaN light-emitting diode microwires of submillimeter length
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
21. The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga–HCl–NH$_3$–H$_2$–Ar system
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:10 (2015),  29–34