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Publications in Math-Net.Ru
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Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films
Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 360–364
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Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021), 31–33
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Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 47–50
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Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021), 24–27
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Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 51–54
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A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021), 49–51
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Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 37–40
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Peculiarities of magnetron sputtering of nickel oxide thin films for use in perovskite solar cells
Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 460–464
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Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices
Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1668–1674
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Formation of Cu$_{2}$O and ZnO crystal layers by magnetron assisted sputtering and their optical characterization
Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 402–408
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Nanoscale Cu$_2$O films: Radio-frequency magnetron sputtering and structural and optical studies
Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 111–115
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Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition
Fizika Tverdogo Tela, 58:12 (2016), 2314–2318
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Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires
Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1543–1547
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