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Baranov Artem Igorevich

Publications in Math-Net.Ru

  1. Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  360–364
  2. Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  31–33
  3. Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  47–50
  4. Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021),  24–27
  5. Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  51–54
  6. A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021),  49–51
  7. Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  37–40
  8. Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices

    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1668–1674


© Steklov Math. Inst. of RAS, 2024