Sobolev Nikolai Alekseevich

Publications in Math-Net.Ru

1. Effect of additional implantation with oxygen ions on the dislocation-related luminescence in silicon-containing oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  928–931
2. Effect of compressive and stretching strains on the dislocation luminescence spectrum in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  550–553
3. Silicon light-emitting diodes with luminescence from (113) defects
   
   Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  580–584
4. Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  437–440
5. Dislocation-related photoluminescence in silicon implanted with germanium ions
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  165–168
6. Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  161–164
7. Defect structure of GaAs layers implanted with nitrogen ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  24–30
8. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
9. Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1182–1184
10. Injection-induced terahertz electroluminescence from silicon $p$–$n$ structures
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  632–636
11. Formation of hexagonal 9$R$ silicon polytype by ion implantation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  87–92
12. Dislocation-related photoluminescence in silicon implanted with fluorine ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  14–20
13. Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
    
    Fizika Tverdogo Tela, 58:12 (2016),  2411–2414
14. Electroluminescence properties of LEDs based on electron-irradiated $p$-Si
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  254–258
15. Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  250–253
16. Si:Si LEDs with room-temperature dislocation-related luminescence
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  241–244