Ivanov Èduard Vladimirovich

Publications in Math-Net.Ru

1. Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  995–1010
2. Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  607–613
3. Forming a type-II heterojunction in the InAsSb/InAsSbP semiconductor structure
   
   Fizika Tverdogo Tela, 62:11 (2020),  1822–1827
4. Radiative recombination and impact ionization in semiconductor nanostructures (review)
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1267–1288
5. Long-wavelength leds in the atmospheric transparency window of 4.6 – 5.3 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  202–206
6. InAs$_{1-y}$Sb$_{y}$/InAsSbP narrow-gap heterostructures ($y$ = 0.09–0.16) grown by metalorganic vapor phase epitaxy for the spectral range of 4–6 $\mu$m
   
   Fizika Tverdogo Tela, 61:10 (2019),  1746–1753
7. Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  832–838
8. Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54
9. Rearrangement of electroluminescence spectra in type-II $n$-InAs/$n$-InAsSbP heterostructures
   
   Fizika Tverdogo Tela, 60:3 (2018),  585–590
10. GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1094–1099
11. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
12. Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons
    
    Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017),  315–318
13. Features of high-temperature electroluminescence in an LED $n$-GaSb/$n$-InGaAsSb/$p$-AlGaAsSb heterostructure with high potential barriers
    
    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  794–800


14. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476