RUS  ENG
Full version
PEOPLE

Malevskaya Alexandra Vyacheslavovna

Publications in Math-Net.Ru

  1. High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1218–1222
  2. Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1086–1090
  3. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
  4. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  614–617
  5. Dynamics of air humidity in a concentrator photovoltaic module with a drying device

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  52–54
  6. Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  14–17
  7. Investigation of passivating and protecting methods for multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  35–37
  8. Control system of Sun-tracking accuracy for concentration photovoltaic installations

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  11–13
  9. Development of methods for liquid etching of a separation mesa-structure in creating multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  14–16
  10. Studying the formation of antireflection coatings on multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  15–17
  11. A study of ohmic contacts of power photovoltaic converters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019),  12–15
  12. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters

    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215


© Steklov Math. Inst. of RAS, 2024