Nakhimovich M V

Publications in Math-Net.Ru

1. High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1218–1222
2. InGaAsP/InP photovoltaic converters for narrowband radiation
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1091–1094
3. GaSb-based thermophotovoltaic converters of IR selective emitter radiation
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  956–959
4. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
5. Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the $i$-region
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  28–31
6. Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  51–54
7. Increasing the efficiency of 520- to 540-nm laser radiation photovoltaic converters based on GaInP/GaAs heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  29–31
8. Effects of doping of bragg reflector layers on the electrical characteristics of InGaAs/GaAs metamorphic photovoltaic converters
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  400–407
9. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14