Shvarts Maxim Zinov'evich

Publications in Math-Net.Ru

1. High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1218–1222
2. GaSb-based thermophotovoltaic converters of IR selective emitter radiation
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  956–959
3. Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  699–703
4. Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the $i$-region
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  28–31
5. Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  51–54
6. Increasing the efficiency of 520- to 540-nm laser radiation photovoltaic converters based on GaInP/GaAs heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  29–31
7. Laser power converter modules with a wavelength of 809–850 nm
   
   Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1764–1768
8. Comparative analysis of the optical and physical properties of inas and InAs, In$_{0.8}$Ga$_{0.2}$As quantum dots and solar cells based on them
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1079–1087
9. Effects of doping of bragg reflector layers on the electrical characteristics of InGaAs/GaAs metamorphic photovoltaic converters
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  400–407
10. Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  195–201
11. High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  11–14
12. The influence of the number of rows of GaInAs quantum objects on the saturation current of GaAs photoconverters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:12 (2020),  30–33
13. Finding the energy gap of Ga$_{1-x}$In$_{x}$As $p$–$n$ junctions on a metamorphic buffer from the photocurrent spectrum
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  29–31
14. Experimental and theoretical examination of the photosensitivity spectra of structures with In$_{0.4}$Ga$_{0.6}$As quantum well-dots of the optical range (900–1050 nm)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  3–6
15. Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1714–1717
16. Counteracting the photovoltaic effect in the top intergenerator part of GaInP/GaAs/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1568–1572
17. Module of laser-radiation ($\lambda$ = 1064 nm) photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1135–1139
18. Increasing the photocurrent of a Ga(In)As subcell in multijunction solar cells based on GaInP/Ga(In)As/Ge heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  41–43
19. Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  10–13
20. Anomalies in photovoltaic characteristics of multijunction solar cells at ultrahigh solar light concentrations
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  37–39
21. Characteristics of a silicon avalanche photodiode for the near-IR spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  40–42
22. High-efficiency conversion of high-power-density laser radiation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019),  26–28
23. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters
    
    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215
24. AlGaAs/GaAs photovoltaic converters of tritium radioluminescent-lamp radiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1647–1650
25. Multilayer quantum well–dot InGaAs heterostructures in GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1131–1136
26. Recombination in GaAs $p$-$i$-$n$ structures with InGaAs quantum-confined objects: modeling and regularities
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1126–1130
27. In$_{0.8}$Ga$_{0.2}$As quantum dots for GaAs solar cells: metal-organic vapor-phase epitaxy growth peculiarities and properties
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  729–735
28. Modification of photovoltaic laser-power ($\lambda$ = 808 nm) converters grown by LPE
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  385–389
29. Optical properties of InGaAs/InAlAs metamorphic nanoheterostructures for photovoltaic converters of laser and solar radiation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  50–58
30. The effect of base thickness on photoconversion efficiency in textured silicon-based solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  40–49
31. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  94–100
32. Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  89–93
33. Specific features of current flow in $\alpha$-Si : H/Sii heterojunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:3 (2017),  29–38
34. On current spreading in solar cells: a two-parameter tube model
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  987–992
35. Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  525–530
36. Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters
    
    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  132–137
37. Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm
    
    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  125–131
38. The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  70–76