RUS  ENG
Full version
PEOPLE

Potekhin Aleksandr Aleksandrovich

Publications in Math-Net.Ru

  1. Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  743–747
  2. Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1279–1284
  3. Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1520–1524
  4. Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1489–1492


© Steklov Math. Inst. of RAS, 2024