Tarasova Elena Alexandrovna

Publications in Math-Net.Ru

1. Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  668–675
2. Silicon-on-insulator structures microtopography transformations features after photonic and corpuscular radiation exposure
   
   Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  1025–1031
3. Analysis of nonlinear distortions of D$p$HEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  844–847
4. Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  872–876
5. Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  846–849
6. Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  743–747
7. Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  51–54
8. A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  38–41
9. Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  968–973
10. Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1414–1420
11. Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1543–1546
12. Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1605–1609
13. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
14. Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  331–338