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Publications in Math-Net.Ru
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Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 872–876
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Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons
Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 846–849
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Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses
Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747
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Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54
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A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 38–41
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Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 968–973
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Analysis of the behavior of nonequilibrium semiconductor structures and microwave transistors during and after pulsed $\gamma$- and $\gamma$-neutron irradiation
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1414–1420
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Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1543–1546
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Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1605–1609
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Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1599–1604
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Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation
Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 331–338
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