Koryazhkina Mariya Nikolaevna

Publications in Math-Net.Ru

1. Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer
   
   Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1833–1842
2. Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  723–727
3. Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  754–757
4. Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films
   
   Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1669–1673
5. Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019),  927–934
6. The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  3–6
7. Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1639–1643
8. Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1615–1619
9. Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  78–84
10. Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  52–60