Reznik Rodion Romanovich

Publications in Math-Net.Ru

1. Specific features of structural stresses in InGaN/GaN nanowires
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  785–788
2. MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  32–35
3. Directional radiation from GaAs quantum dots in AlGaAs nanowires
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  47–50
4. Nonlinear bleaching of InAs nanowires in the visible range
   
   Optics and Spectroscopy, 128:1 (2020),  128–133
5. The significance of fitting in the description of luminescence kinetics of hybrid nanowires
   
   Optics and Spectroscopy, 128:1 (2020),  122–127
6. Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ТОРО-CdSe/ZnS quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  952–957
7. Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  902–905
8. Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  884–887
9. MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition
   
   Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  542
10. Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020),  32–35
11. Nonradiative energy transfer in hybrid nanostructures with varied dimensionality
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1289–1292
12. Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  48–50
13. The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  37–40
14. Solar cell based on core/shell nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1464–1468
15. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
16. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
17. MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  522
18. GaAs wurtzite nanowires for hybrid piezoelectric solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  511
19. Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  509
20. Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  469
21. GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  5–9
22. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
23. GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1587
24. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1525–1529
25. Terahertz radiation generation in multilayer quantum-cascade heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  86–94
26. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
    
    Fizika Tverdogo Tela, 58:10 (2016),  1886–1889
27. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1644–1646
28. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1441–1444
29. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678