Zemlyakov Valerii Evgen'evich

Publications in Math-Net.Ru

1. Effect of temperature on the switching voltage of avalanche $S$-diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  23–26
2. Mechanism of sequential switching of current filaments in an avalanche $S$-diode
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  393–399
3. Analysis of nonlinear distortions of D$p$HEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  844–847
4. Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1260–1263
5. Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  872–876
6. Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  15–17
7. Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  748–752
8. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
9. AlN/GaN heterostructures for normally-off transistors
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  395–402
10. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
11. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
12. Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  331–338
13. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
14. Normally off transistors based on in situ passivated AlN/GaN heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  72–79
15. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63