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Publications in Math-Net.Ru
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Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures
Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1260–1263
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Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs
Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 872–876
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Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 15–17
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Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 748–752
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Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24
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AlN/GaN heterostructures for normally-off transistors
Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 395–402
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Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1599–1604
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Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1401–1407
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Study of the electron distribution in GaN and GaAs after $\gamma$-neutron irradiation
Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 331–338
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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 245–249
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Normally off transistors based on in situ passivated AlN/GaN heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 72–79
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Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 57–63
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