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Publications in Math-Net.Ru
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Relaxation of mechanical stress in epitaxial films of cubic silicon carbide on silicon substrates with a buffer porous layer
Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 988–996
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Sol–gel derived photonic crystals BaTiO$_{3}$/SiO$_{2}$
Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 912–915
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Electron-quantum transport in pseudomorphic and metamorphic In$_{0.2}$Ga$_{0.8}$As-based quantum wells
Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 359–364
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Influence of mechanical stretching on adsorption properties of nitrogen-doped graphene
Fizika Tverdogo Tela, 60:4 (2018), 816–820
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Electron transport in phemt AlGaAs/InGaAs/GaAs ÐÍÅÌÒ quantum wells at different temperatures: influence of one-side $\delta$-Si doping
Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 201–206
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Electron effective mass and momentum relaxation time in one-sided $\delta$-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells with high electron density
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 120–127
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Peculiarities of silicon-donor ionization and electron scattering in pseudomorphous AlGaAs/InGaAs/GaAs quantum wells with heavy unilateral $\delta$-doping
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 34–41
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