Levin Roman Viktorovich

Publications in Math-Net.Ru

1. Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  932–936
2. Smoothing the surface of gallium antimonide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  48–50
3. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
4. Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers
   
   Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019),  1592–1597
5. High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1599–1603
6. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
7. On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  273–276
8. Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  50–54
9. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
10. GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1641–1646
11. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
12. Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  25–31
13. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
14. A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  78–86
15. Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  3–9
16. GaSb laser-power ($\lambda$ = 1550 nm) converters: Fabrication method and characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1358–1362
17. InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  79–84


18. Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  476