Vlasov Aleksei Sergeevich

Publications in Math-Net.Ru

1. GaInP on silicon nanostructures self-catalyst growth from vapor phase
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  45–49
2. Phase separation effects in AlGaAsSb/GaSb alloys
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  10–12
3. Impact of the atomic ordering degree on the ferroelectric properties of GaInP$_2$ alloys
   
   Optics and Spectroscopy, 132:11 (2024),  1127–1130
4. Local doping of monolayer WSe$_2$ on piezoelectric GaInP$_2$ and GaN substrates
   
   Fizika i Tekhnika Poluprovodnikov, 58:8 (2024),  401–408
5. Optical characterization of InGaAsP/InP(001) heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024),  47–50
6. Numerical modelling of aluminum distribution profiles in the Al–Ga–As–Sn epitaxial layer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:1 (2024),  36–38
7. Gradient layers in a four-component Al–Ga–As–Sn system growth by liquid-phase epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 93:10 (2023),  1476–1480
8. Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  620–623
9. Development of the technology for production power laser conventers on wavelength 1.06 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  590–593
10. Features of InP on Si nanowire growth
    
    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  530–533
11. Solid-phase substitution processes with phosphorus in InAs and InSb
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  20–22
12. Influence of source composition on the planar growth of nanowires during catalytic growth in a quasi-closed volume
    
    Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1082–1087
13. Obtaining anisotypic heterostructures for a GaSb-based photovoltaic converter due to solid-phase substitution reactions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022),  3–5
14. Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  932–936
15. Replacing tunnel junctions in InP with conduction channels with GaP crystallites
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  52–54
16. Smoothing the surface of gallium antimonide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  48–50
17. Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1714–1717
18. High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1599–1603
19. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
20. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
21. A study of ohmic contacts of power photovoltaic converters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019),  12–15
22. AlGaAs/GaAs photovoltaic converters of tritium radioluminescent-lamp radiation
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1647–1650
23. Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1244–1249
24. Wigner localization and whispering gallery modes of electrons in quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  478
25. Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  477
26. Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1066–1070
27. Model calculating high-speed collisions between bodies with different shapes and massive metallic obstacles
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1033–1039
28. Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  699–703
29. Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  611–614
30. High-rate deformation of nanocrystalline iron and copper
    
    Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016),  70–74