Vlasov Aleksei Sergeevich

Publications in Math-Net.Ru

1. Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  932–936
2. Replacing tunnel junctions in InP with conduction channels with GaP crystallites
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  52–54
3. Smoothing the surface of gallium antimonide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  48–50
4. Ga(In)AsP lateral nanostructures as the optical component of GaAs-based photovoltaic converters
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1714–1717
5. High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1599–1603
6. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
7. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
8. A study of ohmic contacts of power photovoltaic converters
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019),  12–15
9. AlGaAs/GaAs photovoltaic converters of tritium radioluminescent-lamp radiation
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1647–1650
10. Nanostructure growth in the Ga(In)AsP–GaAs system under quasi-equilibrium conditions
    
    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1244–1249
11. Wigner localization and whispering gallery modes of electrons in quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  478
12. Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  477
13. Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1066–1070
14. Model calculating high-speed collisions between bodies with different shapes and massive metallic obstacles
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1033–1039
15. Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  699–703
16. Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  611–614
17. High-rate deformation of nanocrystalline iron and copper
    
    Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016),  70–74