Baidus Nikolai Vladimirovich

Publications in Math-Net.Ru

1. Dissipative electron tunneling in vertically coupled asymmetric double InAs/GaAs(001) quantum dots
   
   Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1431–1440
2. Comparison of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  978–988
3. Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  37–40
4. GaAs-based laser diode with InGaAs waveguide quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1718–1720
5. Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1271–1274
6. Submonolayer InGaAs/GaAs quantum dots grown by MOCVD
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1159–1163
7. MOS-hydride epitaxy growth of InGaAs/GaAs submonolayer quantum dots for the excitation of surface plasmon–polaritons
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  345–350
8. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
9. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
10. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
11. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
12. Optical thyristor based on GaAs/InGaP materials
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1443–1446
13. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
14. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  75–78
15. Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1576–1582
16. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1509–1512
17. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458