Rykov Artem Vladimirovich

Publications in Math-Net.Ru

1. Comparison of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  978–988
2. Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  37–40
3. Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1271–1274
4. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
5. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
6. Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures
   
   Fizika Tverdogo Tela, 59:11 (2017),  2142–2147
7. Methods for spin injection managing in InGaAs/GaAs/Al$_{2}$O$_{3}$/CoPt spin light-emitting diodes
   
   Fizika Tverdogo Tela, 59:11 (2017),  2135–2141
8. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence
   
   Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
9. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
10. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
11. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
12. Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer
    
    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  3–8