Klochkov Aleksei Nikolaevich

Publications in Math-Net.Ru

1. THz emission from (100)- and (111)A-oriented multiple pseudomorphic quantum wells $\{\mathrm{InGaAs/InAlAs}\}$
   
   Optics and Spectroscopy, 133:3 (2025),  221–231
2. Temperature influence on the crystal structure of CdTe(111) films grown by molecular-beam epitaxy on GaAs(100) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  141–149
3. Generation of THz radiation by (100), (110), and (111)A-oriented multiple pseudomorphic InGaAs/GaAs quantum wells and photoconductive antennas
   
   Kvantovaya Elektronika, 54:1 (2024),  43–50
4. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
5. Thz radiation of photoconductive antennas based on $\{$LT-GaAs/GaAs:Si$\}$ superlattice structures
   
   Optics and Spectroscopy, 128:7 (2020),  1004–1011
6. Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates
   
   Optics and Spectroscopy, 128:7 (2020),  877–884
7. Silicon-doped epitaxial films grown on GaAs(110) substrates: the surface morphology, electrical characteristics, and photoluminescence spectra
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1203–1210
8. Electrical and photoluminescence studies of $\{\mathrm{LT}-\mathrm{GaAs/GaAs} : \mathrm{Si}\}$ superlattices grown by MBE on (100)- and (111)A-oriented GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  258–266
9. Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  723–728
10. Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  395–401
11. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
12. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
13. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  322–330
14. Photoluminescence properties of modulation-doped In$_x$Al$_{1-x}$As/In$_y$Ga$_{1-y}$As/In$_x$Al$_{1-x}$As structures with strained inas and gaas nanoinserts in the quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1243–1253
15. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  241–248
16. Application of photoluminescence spectroscopy to studies of In$_{0.38}$Al$_{0.62}$As/In$_{0.38}$Ga$_{0.62}$As/In$_{0.38}$Al$_{0.62}$As metamorphic nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  909–916
17. Photoluminescence studies of In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As metamorphic heterostructures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  658–666
18. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As HEMT nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  67–72