Klochkov Aleksei Nikolaevich

Publications in Math-Net.Ru

1. Generation of THz radiation by (100), (110), and (111)A-oriented multiple pseudomorphic InGaAs/GaAs quantum wells and photoconductive antennas
   
   Kvantovaya Elektronika, 54:1 (2024),  43–50
2. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
3. Thz radiation of photoconductive antennas based on $\{$LT-GaAs/GaAs:Si$\}$ superlattice structures
   
   Optics and Spectroscopy, 128:7 (2020),  1004–1011
4. Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates
   
   Optics and Spectroscopy, 128:7 (2020),  877–884
5. Silicon-doped epitaxial films grown on GaAs(110) substrates: the surface morphology, electrical characteristics, and photoluminescence spectra
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1203–1210
6. Electrical and photoluminescence studies of $\{\mathrm{LT}-\mathrm{GaAs/GaAs} : \mathrm{Si}\}$ superlattices grown by MBE on (100)- and (111)A-oriented GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  258–266
7. Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  723–728
8. Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  395–401
9. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
10. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
11. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  322–330