Nikitina Ekaterina Viktorovna

Publications in Math-Net.Ru

1. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1077–1080
2. High-precision characterization of super-multiperiod AlGaAs/GaAs superlattices using X-ray reflectometry on a synchrotron source
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  7–10
3. Correcting the characteristics of silicon photodiodes by ion implantation
   
   Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  557–563
4. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
5. The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1726–1732
6. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
7. Influence of a por-Si buffer layer on the optical properties of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures with a nanocolumnar film morphology
   
   Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  70–76
8. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
9. Experimental study of spontaneous emission in Bragg multiple- quantum-well structures with InAs single-layer quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  736–740
10. Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  524
11. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
12. The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017),  47–54
13. The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  97–102
14. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
    
    Fizika Tverdogo Tela, 58:10 (2016),  1886–1889
15. Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 $\mu$m
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1320–1324
16. GaAs/InGaAsN heterostructures for multi-junction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  663–667
17. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
18. The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  14–19