Sobolev Maxim Sergeevich

Publications in Math-Net.Ru

1. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1077–1080
2. High-precision characterization of super-multiperiod AlGaAs/GaAs superlattices using X-ray reflectometry on a synchrotron source
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  7–10
3. Deep X-ray reflectometry of supermultiperiod A$_3$B$_5$ structures with quantum wells grown by molecular-beam epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1906–1912
4. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
5. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
6. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
7. Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  524
8. The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  97–102
9. GaAs/InGaAsN heterostructures for multi-junction solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  663–667
10. The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  14–19