Garmash Valentin Igorevich

Publications in Math-Net.Ru

1. Temperature stability features of ohmic contacts resistance to GaAs and GaN based nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1260–1263
2. Study of nitrogen ion implantation through Si$_3$N$_4$ layer for GaN on Si power hemts isolation process
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  15–17
3. Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  748–752