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Prasad B
Publications in Math-Net.Ru
Performance evaluation of inversion mode and junctionless dual-material double-surrounding gate Si nanotube MOSFET for 5-nm gate length
Fizika i Tekhnika Poluprovodnikov
,
55
:4 (2021),
355
Silicon nanowire parameter extraction using DFT and comparative performance analysis of SiNWFET and CNTFET devices
Fizika i Tekhnika Poluprovodnikov
,
55
:1 (2021),
83
Dual material gate engineering to reduce DIBLl in cylindrical gate all around Si nanowire MOSFET for 7-nm gate length
Fizika i Tekhnika Poluprovodnikov
,
54
:11 (2020),
1250
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Steklov Math. Inst. of RAS
, 2024