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Prasad B

Publications in Math-Net.Ru

  1. Performance evaluation of inversion mode and junctionless dual-material double-surrounding gate Si nanotube MOSFET for 5-nm gate length

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  355
  2. Silicon nanowire parameter extraction using DFT and comparative performance analysis of SiNWFET and CNTFET devices

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  83
  3. Dual material gate engineering to reduce DIBLl in cylindrical gate all around Si nanowire MOSFET for 7-nm gate length

    Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1250


© Steklov Math. Inst. of RAS, 2024