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Publications in Math-Net.Ru
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High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures
Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021), 1158–1163
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The influence of the conditions of getter formation in high-resistivity silicon on the characteristics of PIN photodiodes
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 11–13
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A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078
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High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 52–54
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The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019), 59–62
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Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018), 19–25
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Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 83–89
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