Valisheva Natal'ya Aleksandrovna

Publications in Math-Net.Ru

1. High-power microwave photodiodes based on MBE-grown InAlAs/InGaAs heterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 91:7 (2021),  1158–1163
2. The effect of fluorine on the density of states at the anodic oxide layer/In$_{0.53}$Ga$_{0.47}$As interface
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:10 (2021),  11–14
3. Effect of oxygen and fluorine absorption on the electronic structure of the InSb(111) surface
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  3–12
4. Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  10–13
5. A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
   
   Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1071–1078
6. High-power high-speed Schottky photodiodes for analog fiber-optic microwave signal transmission lines
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  52–54
7. The influence of the InAlAs layer surface morphology on the temperature dependence of parameters of Au/Ti/$n$-InAlAs (001) Schottky diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  59–62
8. Features of current flow in structures based on Au/Ti/$n$-InAlAs Schottky barriers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017),  83–89