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Publications in Math-Net.Ru
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Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks
Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1474–1478
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Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 23–26
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The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 30–32
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Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate
Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1741–1749
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Resistive switching in memristors based on Ag/Ge/Si heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 44–46
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Submonolayer InGaAs/GaAs quantum dots grown by MOCVD
Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1159–1163
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MOS-hydride epitaxy growth of InGaAs/GaAs submonolayer quantum dots for the excitation of surface plasmon–polaritons
Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 345–350
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