Publications in Math-Net.Ru
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GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters
Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1727–1731
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AlInSb/InSb heterostructures for IR photodetectors grown by molecular-beam epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 3–6
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Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24
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Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 48–56
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Increasing saturated electron-drift velocity in donor–acceptor doped phemt heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 77–84
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Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1696
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