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Publications in Math-Net.Ru
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Plasma electron temperature measurement by foil soft-X-ray spectrometer installed on TUMAN-3M and Globus-M2 tokamaks
Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 1922–1929
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Radiation power of a high-current vacuum arc stabilized by an axial magnetic field in the visible and UV ranges of the spectrum
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 18–20
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Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm
Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020), 1386–1392
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Detector for detection of electrons with an energy of 5–30 keV for the “Troitsk nu-mass” setup
Zhurnal Tekhnicheskoi Fiziki, 90:4 (2020), 693–698
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Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440
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Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019), 10–13
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Characteristics of a silicon avalanche photodiode for the near-IR spectral range
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 40–42
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Defect structure of GaAs layers implanted with nitrogen ions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018), 24–30
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The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50
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