Rochas Stanislav Stanislavovich

Publications in Math-Net.Ru

1. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers
   
   Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
2. Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  3–7
3. Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  3–8
4. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
5. The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  49–54
6. The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  27–30
7. A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  21–25
8. Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice
   
   Optics and Spectroscopy, 127:6 (2019),  963–966
9. Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 $\mu$m formed by a plate sintering technique
   
   Optics and Spectroscopy, 127:1 (2019),  145–149
10. Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1128–1134
11. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
12. Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them
    
    Optics and Spectroscopy, 125:2 (2018),  229–233
13. On the impact of barrier-layer doping on the photoluminescence efficiency of InGaAlAs/InGaAs/InP strained-layer heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1034–1037