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Niu Jing-Shiuan
Publications in Math-Net.Ru
Thermal stability of HfO
$_2$
|AlGaN|GaN normally-Off transistors with Ni|Au and Pt gate metals
Fizika i Tekhnika Poluprovodnikov
,
55
:7 (2021),
618
Investigation of Pd|HfO
$_2$
|AlGaN|GaN enhancement-mode high electron mobility transistor with sensitization, activation, and electroless-plating approaches
Fizika i Tekhnika Poluprovodnikov
,
54
:7 (2020),
684
Comparative studies of AlGaAs/InGaAs enhancement/depletion-mode high electron mobility transistors with virtual channel layers by hybrid gate recesses approaches
Fizika i Tekhnika Poluprovodnikov
,
53
:3 (2019),
430
©
Steklov Math. Inst. of RAS
, 2024