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Vostretsova Liubov N.

Publications in Math-Net.Ru

  1. Tunneling recombination in GaN/InGaN LEDs with a single quantum well

    Nanosystems: Physics, Chemistry, Mathematics, 15:2 (2024),  204–214
  2. The degradation of InGaN/GaN-based structures under the action of gamma-radiation

    University proceedings. Volga region. Physical and mathematical sciences, 2022, no. 3,  72–84
  3. Influence of backlighting on current-voltage characteristics of InGaN/GaN-based structures with back-shift

    Izv. Sarat. Univ. Physics, 21:4 (2021),  372–380
  4. The effect of $\gamma$-radiation on the electrical and optical characteristics of InGàN/GàN leds

    University proceedings. Volga region. Physical and mathematical sciences, 2020, no. 4,  69–79
  5. Volt-ampere characteristics of InGaN/GaN-based structures at high level of injection

    University proceedings. Volga region. Physical and mathematical sciences, 2019, no. 2,  75–86
  6. Photodetectors based on CuInS$_2$

    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  106–111
  7. Determination of energy parameters of electronic states in semiconductor carbon nanotubes

    University proceedings. Volga region. Physical and mathematical sciences, 2012, no. 4,  205–213

  8. Modeling of current transfer processes in carbon nanotubes

    University proceedings. Volga region. Physical and mathematical sciences, 2009, no. 3,  138–144


© Steklov Math. Inst. of RAS, 2024