Chernykh Igor' Anatol'evich

Publications in Math-Net.Ru

1. Magnetoresistance and symmetry of a two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 119:8 (2024),  598–603
2. Gan-on-silicon growth features: controlled plastic deformation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  26–29
3. Substrates with diamond heat sink for epitaxial GaN growth
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  13–16
4. Quantum coherence and the Kondo effect in the 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  962–967
5. Power characteristics of GaN microwave transistors on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  11–14
6. Ohmic contacts to europium oxide for spintronic devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  38–40
7. A superconducting joint for 2G HTS tapes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  18–20
8. Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  52–54
9. Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  630–636