Lukashin Vladimir Mikailovich

Publications in Math-Net.Ru

1. Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  21–28
2. GaN field-effect transistor with efficient heat dissipation on Si substrate
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  10–13
3. The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  11–14
4. A millimeter-wave field-effect transistor based on a pseudomorphic heterostructure with an additional potential barrier
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  52–54
5. Thermal surface interface for high-power arsenide–gallium heterostructure fets
   
   Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019),  252–257
6. Features of the upsurge in drift velocity of electrons in DA-pHEMT
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018),  103–110
7. A two-dimensional electron gas in donor–acceptor doped backward heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017),  42–51
8. Studying average electron drift velocity in pHEMT structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:16 (2016),  41–47
9. Adjusting the position of the optimum operating point of a power heterostructure field-effect transistor by forming a gate potential barrier based on a donor-acceptor structure
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015),  81–87