Usov Sergei Olegovich

Publications in Math-Net.Ru

1. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
2. The influence of reactor pressure on the properties of GaN layers grown by MOVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
3. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography
   
   Fizika Tverdogo Tela, 61:12 (2019),  2333
4. Selective epitaxial growth of III–N structures using ion-beam nanolithography
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
5. InGaN/GaN light-emitting diode microwires of submillimeter length
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
6. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
7. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
   
   Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269