Maltsev Petr Pavlovich

Publications in Math-Net.Ru

1. Measurement of radio transparency of polycrystalline CVD-diamond in millimeter-wave range by free-space method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  43–46
2. Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  395–401
3. Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1267–1272
4. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
5. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
6. Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  535–539
7. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  529–534
8. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  322–330
9. Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si$_{3}$N$_{4}$ passivation
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1434–1438
10. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
11. Laser-assisted simulation of transient radiation effects in heterostructure components based on А$^{\mathrm{III}}$В$^{\mathrm{V}}$ semiconductor compounds
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  223–228
12. Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  195–203
13. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  185–190