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Publications in Math-Net.Ru
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Replacing tunnel junctions in InP with conduction channels with GaP crystallites
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021), 52–54
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Electrical contacts to InP-based structures with a Zn-doped subcontact layer to $p$-InP
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 13–14
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Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 22–24
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Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1512–1518
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Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 22–25
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GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)
Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1641–1646
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Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 25–31
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A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 17–24
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Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 3–9
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