Publications in Math-Net.Ru
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Calculating silicon-amorphization doses under medium-energy light-ion irradiation
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 771–777
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Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020), 24–27
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The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 3–6
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Calculation of the influence of the ion current density and temperature on the accumulation kinetics of point defects under the irradiation of Si with light ions
Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 967–972
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Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 274–278
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