Malysheva Evgeniya Igorevna

Publications in Math-Net.Ru

1. Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  40–43
2. Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment
   
   Fizika Tverdogo Tela, 60:11 (2018),  2141–2146
3. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
4. Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures
   
   Fizika Tverdogo Tela, 59:11 (2017),  2142–2147
5. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence
   
   Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
6. Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties
   
   Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017),  1389–1394
7. Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/$n^{+}$-GaAs/(Ga,Mn)As
   
   Fizika Tverdogo Tela, 58:11 (2016),  2190–2194
8. Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer
   
   Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  3–8