Malysheva Evgeniya Igorevna

Publications in Math-Net.Ru

1. Управление магнитными характеристиками спиновых светодиодов с магнитной системой “дельта-слой Mn–квантовая яма InGaAs/GaAs” за счет дельта-легирования акцепторной примесью
   
   Fizika Tverdogo Tela, 67:7 (2025),  1348–1353
2. Modification of the functional characteristics of InGaAs/GaAs/Al$_2$O$_3$/CoPt spin light-emitting diodes
   
   Fizika Tverdogo Tela, 66:2 (2024),  184–189
3. Long-range magnetic interaction in InGaAs/GaAs/$\delta$-$\langle$Mn$\rangle$ heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  40–43
4. Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment
   
   Fizika Tverdogo Tela, 60:11 (2018),  2141–2146
5. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
6. Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures
   
   Fizika Tverdogo Tela, 59:11 (2017),  2142–2147
7. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence
   
   Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
8. Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties
   
   Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017),  1389–1394
9. Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/$n^{+}$-GaAs/(Ga,Mn)As
   
   Fizika Tverdogo Tela, 58:11 (2016),  2190–2194
10. Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn $\delta$ layer
    
    Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  3–8
11. Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1497–1500
12. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  370–375
13. Spin injection of electrons in GaMnAs/GaAs/InGaAs light-emitting diode structures with a tunnel junction
    
    Zhurnal Tekhnicheskoi Fiziki, 84:12 (2014),  102–106