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Publications in Math-Net.Ru

  1. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
  2. Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons

    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  991–994


© Steklov Math. Inst. of RAS, 2024