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Publications in Math-Net.Ru
Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
46
:6 (2020),
35–37
Low-temperature annealing of lightly doped
$n$
-4
$H$
-SiC layers after irradiation with fast electrons
Fizika i Tekhnika Poluprovodnikov
,
53
:7 (2019),
991–994
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Steklov Math. Inst. of RAS
, 2024