Publications in Math-Net.Ru
-
Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 22–24
-
Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1512–1518
-
Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 22–25
-
A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 17–24
-
A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 78–86
© , 2024